Samsung Forecast to Top Intel as the #1 Semiconductor Supplier in 2017

Release time:2017-11-22
author:Ameya360
source:IC Insights
reading:1677

  IC Insights will release its November Update to the 2017 McClean Report later this month.  This Update includes a 2017-2021 semiconductor market update, a forecast for the major capital spenders for 2017 and 2018, an analysis of the DRAM market, and a look at the top-25 semiconductor suppliers expected for 2017. The top-10 2017 semiconductor suppliers are covered in this research bulletin.

  For the first time since 1993, the semiconductor industry is expected to witness a new number 1 supplier.  Samsung first charged into the top spot in 2Q17 and displaced Intel, which had held the number 1 ranking since 1993.  In 1Q16, Intel’s sales were 40% greater than Samsung’s, but in just over a year’s time, that lead has been erased.  Intel is now expected to trail Samsung in the full-year 2017 semiconductor sales ranking by $4.6 billion. Samsung’s big increase in sales this year has been primarily driven by an amazing rise in DRAM and NAND flash average selling prices.

  In 1993, Intel was the number 1 ranked supplier with a 9.2% share of the worldwide semiconductor market (Figure 1, which does not include the pure-play foundries).  In 2006, Intel still held the number 1 ranking with an 11.8% share. In 2017, Intel's sales are expected to represent 13.9% of the total semiconductor market, down from 15.6% in 2016. In contrast, Samsung's global semiconductor marketshare was 3.8% in 1993, 7.3% in 2006, 12.1% in 2016, and forecast to be 15.0% in 2017.  Thus, it appears that Samsung’s accession to the number 1 position in the semiconductor sales ranking this year has had more to do with Samsung gaining marketshare than Intel losing marketshare.

  For 2017, the top 10 sales leaders are forecast to hold a 58.5% share of the worldwide semiconductor market.  If this occurs, this would be the largest share of the market the top 10 companies held since 1993.

  Memory giants SK Hynix and Micron are expected to make the biggest moves in the top-10 ranking in 2017 as compared to the 2016 ranking.  Spurred by the surge in the DRAM and NAND flash markets, each company is forecast to move up two spots in the top-10 ranking with SK Hynix occupying the third position and Micron moving up to fourth.

  Excluding foundries, there is expected to be one new entrant into the top-10 ranking in 2017—U.S.-headquartered Nvidia, which is forecast to register a 44% increase in sales this year.  Nvidia is expected to replace fabless supplier MediaTek, whose 2017/2016 sales are expected to be down by 11% to $7.9 billion.

  Six of the top-10 companies are expected to have sales of at least $17.0 billion in 2017.  As shown, it is forecast to take $9.2 billion in sales just to make it into this year’s top-10 semiconductor supplier list.  It should be noted that if Qualcomm and NXP’s expected sales for this year were combined, as if Qualcomm’s pending acquisition had already occurred, the companies’ 2017 sales would be $26.3 billion, enough to place the combined entity into third place in the top 10 ranking.  Moreover, Broadcom’s current attempt to acquire Qualcomm, while Qualcomm itself is in the process of attempting to acquire NXP, adds additional uncertainty with regard to the future top 10 ranking.

  As would be expected, given the possible acquisitions and mergers that could/will occur over the next couple of years (e.g., Qualcomm/NXP, Broadcom/Qualcomm/NXP, etc.), as well as any new ones that may develop, the top-10 semiconductor ranking is likely to undergo some significant changes over the next few years as the semiconductor industry continues along its path to maturity.

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Samsung Reportedly Develops Mobile HBM Packaging With Copper Pillars, Bandwidth Up 15%–30%
  Samsung Electronics is reportedly developing a next-generation HBM packaging technology aimed at bringing high-performance on-device AI to mobile devices. According to ETNews, sources say the company is working on a “Multi Stacked FOWLP” technology that combines ultra-high-aspect-ratio copper pillars with FOWLP (Fan-Out Wafer Level Packaging) by advancing its existing VCS (Vertical Cu-post Stack) technology.  The report notes that traditional mobile memory (LPDDR) packaging still relies on copper wire bonding. However, the technology is limited to roughly 128 to 256 I/O terminals, while also suffering from higher signal loss and lower thermal and power efficiency. To address these constraints, Samsung previously introduced its VCS (Vertical Cu-post Stack) technology, which arranges DRAM dies in a staircase-style stacked structure connected by copper pillars. The newly reported technology is viewed as a further evolution of this approach through the adoption of ultra-high-aspect-ratio copper pillars.  More specifically, Samsung has increased the aspect ratio of copper pillars used in VCS packaging from 3–5:1 to 15–20:1, significantly boosting bandwidth, the report notes. However, copper pillars thinner than 10 micrometers become more vulnerable to bending and breakage. To address this issue, Samsung reportedly combined the design with an FOWLP process, which molds the chip and extends wiring outward to help support the copper pillars.  The approach could enable more I/O terminals within the same area, potentially boosting bandwidth by 15% to 30% while increasing memory stack capacity by more than 1.5 times, the report adds.  Commercialization Timeline Remains Unclear  Meanwhile, the technology is still under development, making the timeline for mass production and commercialization unclear. However, the report says industry observers believe it could be adopted as early as a later version of the Exynos 2800 or the Exynos 2900.  Notably, some industry observers said mobile HBM development and commercialization could progress more slowly than initially expected, as demand for HBM in servers, data centers, and AI accelerators is expected to remain strong for the foreseeable future. The report adds that booming demand for server and data center HBM may make it difficult for Samsung to fully concentrate its resources on mobile HBM development.  SK hynix Advances Mobile AI Packaging  SK hynix is also accelerating development of semiconductor packaging technologies for smartphones and Extended Reality (XR) devices. According to a Hankyung report published earlier this year, sources say the company is developing “High Bandwidth Storage (HBS),” a packaging solution that vertically stacks low-power (LPDDR) DRAM and NAND flash memory beside the Application Processor (AP), which handles core computing tasks in IT devices.  Hankyung notes that HBS adopts a packaging technology called “Vertical Fan-Out” (VFO). Unlike conventional wire bonding, which connects stacked memory and substrates with thin copper wires, VFO uses pillar-shaped interconnects to enable denser wiring and faster data transfer speeds, helping APs process rapidly growing AI-driven workloads.
2026-05-15 10:49 reading:496
[News] Samsung Fails to Secure Qualcomm’s 3nm Orders for the Coming Year, Dual Foundry Strategy Postponed
  According to TechNews’ report, TSMC and Samsung fiercely compete in the semiconductor foundry sector. Earlier market reports suggested that Qualcomm’s Snapdragon 8 Gen 4 mobile processor might adopt a dual-foundry strategy with TSMC and Samsung manufacturing simultaneously.  However, according to the latest industry information, due to Samsung’s conservative expansion plan for next year’s 3nm production capacity and unstable yields, Qualcomm has officially canceled the plan to utilize Samsung for next year’s processors. The dual-sourcing model is now postponed until 2025.  Samsung began mass production of its first-generation 3nm GAA (SF3E) process at the end of June last year, marking Samsung’s initial use of the innovative GAA architecture for transistor technology. The second-generation 3nm process, 3GAP (SF3), will utilize the second-generation MBCFET architecture, optimizing it based on the foundation of the first-generation 3nm SF3E. It is expected to enter mass production in 2024.  The dual-foundry strategy for Qualcomm was initially leaked by the reputable source Revegnus via the X platform (formerly Twitter). It was mentioned that the Snapdragon 8 Gen 4 processor would adopt TSMC’s 3nm (N3E) process, while Samsung’s 3GAP process would be used for the Snapdragon 8 Gen 4 supplying Samsung’s Galaxy series smartphones. Other sources suggested that due to limited capacity at TSMC’s 3nm production, Qualcomm had to seek Samsung as an alternative chip foundry.  As a result, Qualcomm originally anticipated dual-foundry production with both TSMC and Samsung in 2024, with hopes of being the first customer for the 3GAP process. However, considering Samsung’s conservative 3nm production capacity plan for next year and the instability in yields, Qualcomm decided to scrap the plan and exclusively rely on TSMC, pushing the dual-foundry strategy to 2025.  Currently, TSMC’s 3nm process technology capacity is on the rise, with expectations that by the end of 2024, monthly production capacity will reach 100,000 wafers, and the revenue contribution will increase from the current 5% to 10%.
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Samsung cuts NAND flash memory production
Samsung is developing next-generation memory chips for large-scale AI applications such as ChatGPT
  The large-scale application of ChatGPT and other AI chatbots will not only improve the application experience of introducing related technologies, but also bring new development opportunities to several fields, memory chip is one of them. Ameya360 reports that Samsung Electronics is exploring business opportunities by developing customized next-generation memory chips for large AI applications, such as ChatGPT, which is gaining popularity around the world.  The actual impact of ChatGPT on the chip circuit is mainly shown as follows: ChatGPT is based on Transformer technology. With the continuous iteration of the model and the increasing number of layers, the demand for computing power is increasing. Secondly, the three conditions for the operation of ChatGPT, namely, training data + model algorithm + computing power, require large-scale pre-training on the basic model. After three iterations of ChatGPT, the number of references increased from 117 million to 175 billion, and the amount of training increased significantly.  The New Computing business team of Samsung's memory business division is developing a customized next-generation memory for large-scale AI related to ChatGPT. The new computing business team, headed by Kim Jin-hyeon, is known to be a pioneer In the development of a business within the storage business division. Previously, the team focused on the development of Processing In Memory; PIM). Pims can not only store data, but also integrate and calculate data in memory, which can improve the efficiency of data processing and power consumption. Therefore, PIMs are suitable for AI.  In addition, some semiconductor industry insiders pointed out that although traditional AI chips occupy the mainstream at present and AI-dedicated chips are booming, they have met their physical limits, and the future of AI chips may be quantum chips.  Park Seong-soo, a senior researcher at the Quantum Technology Research Center at the Electronics and Communications Research Institute, said ChatGPT can also be used with a lot of computing resources, but if combined with future quantum computers, it will become a more intelligent artificial intelligence.  According to Gartner's report, total global semiconductor revenue in 2022 was approximately $601.7 billion, an increase of 1.1% year-on-year. Samsung's market share was 10.9 per cent. The ChatGPT scandal has created a new opportunity for Samsung to develop memory chips.
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